![]() The other solar parameters of the cell prototypes are estimated as the following: \( V_ \) and FF = 70.2%. The insertion of a GINA layer increases the light-to-electricity yield to 32.4%. Therefore, the i-GINA film sandwiched between n-GaAs and p-GaAs semiconductors is numerically simulated for an area of 1 cm 2. An experimental investigation of 1.9 μm GaInNAs (GINA) through the photoluminescence (PL) technique shows that the investigated quaternary is promising for solar application ( E g = 1.2 eV). The PC1D simulation predicts 25% and 25.9% efficiency for n- p and n-i- p GaAs unit solar cells, which is comparable to the National Renewable Energy Laboratory (NREL) measurement (27.6% for 1 cm 2 GaAs solar cell). Based on a PC1D (Personal Computer One-Dimensional) simulator device, we have investigated three solar prototypes of gallium arsenide structures labeled as SP I, SP II and SP III, under AM1.5G condition at one sun irradiation. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |